氮化镓GaN氮化镓GaN wafer

Item

GaN-FS-N

Dimensions

Ф50.8mm±1mm

Thickness

300 ± 25 µm

Orientation

C-axis(0001) ± 0.5°

Orientation Flat

(1-100) ± 0.5°, 16.0 ±1.0mm

Secondary Orientation Flat

(11-20) ± 3°, 8.0 ±1.0mm

TTV

≤15 µm

BOW

≤20 µm

Conduction Type

N-type

Resistivity(300K)

< 0.5 Ω·cm

Dislocation Density

Less than 5x106 cm-2

Useable Surface Area

> 90%

Polishing

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

Package

Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

Item

GaN-FS-10

Dimensions

10.0mm×10.5mm

Thickness

300 ± 25 µm

Orientation

C-axis(0001) ± 0.5°

TTV

≤15 µm

BOW

≤20 µm

Conduction Type

N-type

Resistivity(300K)

< 0.5 Ω·cm

Dislocation Density

Less than 5x106 cm-2

Useable Surface Area

> 90%

Polishing

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground