世微半导体MOS管采用SGT工艺,性能优越,品质好,具有高频率、大电流、低开启电压、低内阻、结电容小、低消耗、低温升、高转换效率、过电流大、抗冲击能力强、开关损耗小等的优点。
【免费提供方案及技术支持,免费提供样品测试~】
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
The 10N10 is the hig hestp erformance trench N-
ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.